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MRFX1K80H 1 rf device data nxp semiconductors rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet this high ruggedness device is designed for use in high vswr industrial, medical, broadcast, aerospace and mob ile radio applications. its unmatched input and output design supports frequency use from 1.8 to 400 mhz. typical performance frequency (mhz) signal type v dd (v) p out (w) g ps (db) d (%) 27 (1) cw 65 1800 cw 27.8 75.6 64 pulse (100 sec, 10% duty cycle) 65 1800 peak 27.1 69.5 81.36 cw 63 1700 cw 24.5 76.3 87.5?108 (2,3) cw 60 1600 cw 23.6 82.5 123/128 pulse (100 sec, 10% duty cycle) 65 1800 peak 25.9 69.0 144 cw 65 1800 cw 23.5 78.0 230 (4) pulse (100 sec, 20% duty cycle) 65 1800 peak 25.1 75.1 325 pulse (12 sec, 10% duty cycle) 63 1700 peak 22.8 64.9 load mismatch/ruggedness frequency (mhz) signal type vswr p in (w) test voltage result 230 (4) pulse (100 sec, 20% duty cycle) > 65:1 at all phase angles 14 w peak (3 db overdrive) 65 no device degradation 1. data from 27 mhz narrowband reference circuit (page 5). 2. data from 87.5?108 mhz broadband reference circuit (page 10). 3. the values shown are the center band performance numbers across the indicated frequency range. 4. data from 230 mhz narrowband production test fixture (page 16). features ? unmatched input and output allowing wide frequency range utilization ? device can be used single--ended or in a push--pull configuration ? qualified up to a maximum of 65 v dd operation ? characterized from 30 to 65 v for extended power range ? high breakdown voltage for enhanced reliability ? suitable for linear application with appropriate biasing ? integrated esd protection with gr eater negative gate--source voltage r ange for improved class c operation ? lower thermal resistance option in over--molded plastic package: mrfx1k80n ? included in nxp product longevity program with assured supply for a minimum of 15 years after launch typical applications ? industrial, scientific, medical (ism) ? laser generation ? plasma generation ? particle accelerators ? mri, rf ablation and skin treatment ? industrial heating, weld ing and dryi ng systems ? radio and vhf tv broadcast ? aerospace ? vhf omnidirectional range (vor) ? hf communications ? weather radar document number: MRFX1K80H rev. 0, 08/2017 nxp semiconductors technical data 1.8?400 mhz, 1800 w cw, 65 v wideband rf power ldmos transistor MRFX1K80H ni--1230h--4s (top view) drain a 31 figure 1. pin connections 42 drain b gate a gate b note: the backside of the package is the source terminal for the transistor. ? 2017 nxp b.v.
2 rf device data nxp semiconductors MRFX1K80H table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +179 vdc gate--source voltage v gs ?6.0, +10 vdc storage temperature range t stg ?65to+150 c case operating temperature range t c ?40 to +150 c operating junction temperature range (1,2) t j ?40 to +225 c total device dissipation @ t c =25 c derate above 25 c p d 2247 11.2 w w/ c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case cw: case temperature 99 c, 1800 w cw, 65 vdc, i dq(a+b) = 150 ma, 98 mhz r jc 0.09 c/w thermal impedance, junction to case pulse: case temperature 65 c, 1800 w peak, 100 sec pulse width, 20% duty cycle, 65 vdc, i dq(a+b) = 100 ma, 230 mhz z jc 0.017 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v charge device model (per jesd22--c101) c3, passes 2000 v table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 adc drain--source breakdown voltage (v gs =0vdc,i d = 100 madc) v (br)dss 179 193 ? vdc zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 179 vdc, v gs =0vdc) i dss ? ? 100 madc on characteristics gate threshold voltage (4) (v ds =10vdc,i d = 740 adc) v gs(th) 2.1 2.5 2.9 vdc gate quiescent voltage (v dd =65vdc,i d(a+b) = 100 madc, measured in functional test) v gs(q) 2.4 2.8 3.2 vdc drain--source on--voltage (4) (v gs =10vdc,i d =2.76adc) v ds(on) ? 0.21 ? vdc forward transconductance (4) (v ds =10vdc,i d =43adc) g fs ? 44.7 ? s 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. each side of device measured separately. (continued)
MRFX1K80H 3 rf device data nxp semiconductors table 4. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit dynamic characteristics (1) reverse transfer capacitance (v ds =65vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 2.9 ? pf output capacitance (v ds =65vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 203 ? pf input capacitance (v ds =65vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 760 ? pf functional tests (in nxp production test fixture, 50 ohm system) v dd =65vdc,i dq(a+b) = 100 ma, p out = 1800 w peak (360 w avg.), f = 230 mhz, 100 sec pulse width, 20% duty cycle power gain g ps 24.0 25.1 26.5 db drain efficiency d 70.0 75.1 ? % input return loss irl ? ?14.4 ?9 db table 5. load mismatch/ruggedness (in nxp production test fixture, 50 ohm system) i dq(a+b) = 100 ma frequency (mhz) signal type vswr p in (w) test voltage, v dd result 230 pulse (100 sec, 20% duty cycle) > 65:1 at all phase angles 14 w peak (3 db overdrive) 65 no device degradation table 6. ordering information device tape and reel information package MRFX1K80Hr5 r5 suffix = 50 units, 56 mm tape width, 13--inch reel ni--1230h--4s 1. each side of device measured separately.
4 rf device data nxp semiconductors MRFX1K80H typical characteristics normalized v gs(q) 1.06 1.04 1.02 1.00 0.98 0.96 0.94 100 ?50 0 ?25 25 50 75 v dd =50vdc 0.92 1.08 1000 ma 1500 ma 500 ma i dq(a+b) = 100 ma 1 100 020 10 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 10 c rss note: each side of device measured separately. c iss 2000 30 40 50 1000 c oss 60 70 measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc figure 3. normalized v gs versus quiescent current and case temperature t c , case temperature ( c) 100 i dq (ma) slope (mv/ c) 500 1000 1500 ?3.21 ?2.79 ?2.69 ?2.61 250 10 9 90 t j , junction temperature ( c) figure 4. mttf versus junction temperature ? cw note: mttf value represents the total cumulative operating time under indicated test conditions. mttf calculator available at http:/www.nxp.com/rf/calculators . 10 7 10 6 110 130 mttf (hours) 150 10 8 10 5 170 190 210 230 i d = 28.1 amps v dd =65vdc i d = 35.6 amps i d = 32.2 amps
MRFX1K80H 5 rf device data nxp semiconductors 27 mhz narrowband reference circuit ? 2.9 6.9 (73 mm 175 mm) table 7. 27 mhz narrowband performance (in nxp reference circuit, 50 ohm system) i dq(a+b) = 200 ma, p in =3w,cw frequency (mhz) v dd (v) p out (w) g ps (db) d (%) 27 50 1200 26.0 82.3 57.5 1520 27.0 80.1 65 1800 27.8 75.6
6 rf device data nxp semiconductors MRFX1K80H 27 mhz narrowband reference circuit ? 2.9 6.9 (73 mm 175 mm) figure 5. MRFX1K80H narrowband reference circuit component layout ? 27 mhz c18 c20 r2 c5 q1 r1 r3 c13 d1 l1 c1 c2 t1 c15 c16 c8 c9 c7 c6 l2 c12 c10 c11 r106 r107 r104 r103 c101 r108 c102 r109 c110 c109 c107 c108 r101 c103 c104 u101 t2 rev. 0 q2 c19 temperature compensation detail t2 transformer detail d101 r105 d94843 c105 c106 q101 c17 temperature compensation d50876 MRFX1K80H mrf1k50h mrfe6vp61k25h r102 note: component numbers c3, c4 and c14 are not used.
MRFX1K80H 7 rf device data nxp semiconductors 27 mhz narrowband reference circuit ? 2.9 6.9 (73 mm 175 mm) table 8. MRFX1K80H narrowband reference circuit component designations and values ? 27 mhz part description part number manufacturer c1, c17, c18 1000 pf chip capacitor atc100b102jt50xt atc c2, c15, c16 39 k pf chip capacitor atc200b393kt50xt atc c5 470 pf chip capacitor atc100c471jt2500xt atc c6, c8 2.2 f chip capacitor hmk432b7225km-t taiyo yuden c7, c9, c19, c20 470 pf chip capacitor atc100b471jt200xt atc c10, c11 22 pf chip capacitor atc100b220jt500xt atc c12 470 f, 100 v electrolytic capacitor mcgpr100v477m16x32-rh multicomp c13 1000 pf chip capacitor c2012x7r2e102m tdk d1 green led, 1206 lg n971-kn-1 osram l1 82 nh inductor 1812sms-82njlc coilcraft l2 7 turns, #16 awg, id = 10 mm inductor, hand wound 8074 belden q1 rf power ldmos transistor MRFX1K80H nxp r1, r2 33 ? , 3 w chip resistor 1-2176070-3 te connectivity r3 9.1 k ?, 1/4 w chip resistor crcw12069k10fkea vishay pcb arlon tc350 0.030 r =3.5 d94843 mtl transformer t1 core multi-aperture core, 43 material 2843000302 fair-rite t1 primary 2 turns, #20 awg magnetic wire 8076 belden t1 secondary 1 turn, #24 awg teflon wire 5854/7 bl005 alpha wire t2 core 61 round cable core, x4 2661102002 fair-rite t2 primary copper pipe, type l, id = 3/8 ,od=1/2 , cut to 2.4 lh03010 mueller t2 secondary 3 turns, #16 awg ptfe covered wire, twisted tef16 rf parts company t2 pcb arlon tc350 0.030 r =3.5,x2 d50876 mtl temperature compensation c101, c102, c104, c106, c108, c110 1 f chip capacitor grm21br71h105ka12l murata c103, c105, c107, c109 1 nf chip capacitor c2012x7r2e102m tdk d101 red led, 1206 lh n974-kn-1 osram q101 npn bipolar transistor bc847alt1g on semiconductor r101 2.2 k ? , 1/8 w chip resistor crcw08052k20jnea vishay r102, r109 1.2 k ? , 1/8 w chip resistor crcw08051k20fkea vishay r103 10 ? , 1/8 w chip resistor rk73h2attd10r0f koa speer r104 1k ? , 1/8 w chip resistor rr1220p-102-d susumu r105 3.9 k ? , 1/8 w chip resistor crcw08053k90jnea vishay r106 200 ?, 1/8 w chip resistor crcw0805200rjnea vishay r107 5k ? multi--turn cermet trimming potentiometer, 11 turns 3224w-1-502e bourns r108 10 ?, 1/4 w chip resistor crcw120610r0jnea vishay u101 voltage regulator 5 v, micro8 lp2951acdmr2g on semiconductor note: refer to MRFX1K80H?s printed circuit boards and schematics to download the 27 mhz heatsink drawing.
8 rf device data nxp semiconductors MRFX1K80H typical characteristics v dd (v) p in , input power (watts) 9 200 p out , output power (watts) 3 12 2000 0 i dq(a+b) = 200 ma, f = 27 mhz figure 6. cw output power versus input power and drain--source voltage 28 24 20 p out , output power (watts) figure 7. power gain and drain efficiency versus cw output power and drain--source voltage g ps , power gain (db) d, drain efficiency (%) 26 22 30 0 80 70 60 50 40 30 20 32 90 34 d g ps 18 5 47 68 1800 1600 1400 1200 1000 800 600 400 200 400 600 800 1000 1200 1400 1600 1800 2000 10 i dq(a+b) = 200 ma, f = 27 mhz v dd =50v 57.5 v 65 v 50 v 57.5 v 65 v v dd =65v 50 v 57.5 v 0 825 1250 p1db (w) p sat (w) 50 1010 1600 57.5 1150 1900 65 27 f (mhz)
MRFX1K80H 9 rf device data nxp semiconductors 27 mhz narrowband reference circuit f mhz z source ? z load ? 27 8.70 + j6.28 6.21 + j2.68 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 8. narrowband series equivalent source and load impedance ? 27 mhz input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ?
10 rf device data nxp semiconductors MRFX1K80H 87.5?108 mhz broadband reference circuit ? 2.9 5.1 (73 mm 130 mm) table 9. 87.5?108 mhz broadband performance (in nxp reference circuit, 50 ohm system) i dq(a+b) = 200 ma, p in =7w,cw frequency (mhz) v dd (v) p out (w) g ps (db) d (%) 87.5 60 1521 23.4 84.9 98 60 1600 23.6 82.5 108 60 1556 23.5 80.0
MRFX1K80H 11 rf device data nxp semiconductors 87.5?108 mhz broadband reference circuit ? 2. 9 5.1 (73 mm 130 mm) 0.45 (11) *c15 and c23 are mounted vertically. r3 c8 c1 c14 c24 c20 l4 c16 c22 c27 c26 c25 c7 c6 c5 r2 c11 c9 c10 c4 c3 c2 c28 r1 c21 c19 c18 c17 c23* c15* l3 q1 l2 l1 d94849 0.22 (6) 0.34 (9) l3 total wire length = 1.7 (43 mm) rev. 0 MRFX1K80H mrf1k50h mrfe6vp61k25h inches (mm) figure 9. MRFX1K80H 87.5?108 mhz broadband reference circuit component layout figure 10. MRFX1K80H 87. 5?108 mhz broadband reference cir cuit component layout ? bottom
12 rf device data nxp semiconductors MRFX1K80H table 10. MRFX1K80H 87.5?108 mhz broadband refere nce circuit component designations and values part description part number manufacturer c1, c3, c6, c9, c18, c19, c20, c21, c22 1000 pf chip capacitor atc100b102jt50xt atc c2 33 pf chip capacitor atc100b330jt500xt atc c4, c5, c8 10 nf chip capacitor atc200b103kt50xt atc c7, c10, c15, c16, c17, c23 470 pf chip capacitor atc100b471jt200xt atc c11 100 pf, 300 v mica capacitor min02-002ec101j-f cde c14, c24 12 pf chip capacitor atc100b120gt500xt atc c25, c26, c27 220 f, 100 v electrolytic capacitor eev-fc2a221m panasonic--ecg c28 22 f, 35 v electrolytic capacitor uud1v220mcl1gs nichicon l1, l2 17.5 nh inductor, 6 turns b06tjlc coilcraft l3 1.5 mm non--tarnish silver plated copper wire, total wire length = 1.7 /43 mm sp1500nt-001 scientific wire company l4 22 nh inductor 1212vs-22nmeb coilcraft q1 rf power ldmos transistor MRFX1K80H nxp r1 10 , 1/4 w chip resistor crcw120610r0jnea vishay r2, r3 33 , 2 w chip resistor 1-2176070-3 te connectivity thermal pad tg series soft thermal conductive pad tg6050-150-150-5.0-0 t-global technology pcb arlon tc350 0.030 , r =3.5 d94849 mtl note: refer to MRFX1K80H?s printed circuit boards and schematics to download the 87.5?108 mhz heatsink drawing.
MRFX1K80H 13 rf device data nxp semiconductors typical characteristics ? 87.5?108 mhz, 60 v broadband reference circuit 21 98 mhz 108 mhz 87.5 mhz 93 f, frequency (mhz) 27 26 1300 90 85 80 70 1700 1600 d , drain efficiency (%) d g ps , power gain (db) 25 24 23 22 18 95 97 99 101 103 105 107 75 1500 p out ,output power (watts) v dd =60vdc,p in =7w,l dq(a+b) = 200 ma p out 91 89 109 87 20 1400 19 g ps 0 p in, input power (watts) 0 p out , output power (watts) 1200 1000 800 600 400 46 1600 1400 2 200 v dd =60vdc,i dq(a+b) = 200 ma 8 1800 10 12 34 0 200 28 24 80 70 60 g ps , power gain (db) 20 400 600 32 90 g ps d 800 1600 30 26 22 1000 1200 1400 1800 v dd =60vdc,l dq(a+b) = 200 ma f = 87.5 mhz 98 mhz 50 40 30 20 108 mhz 87.5 mhz 98 mhz 108 mhz d , drain efficiency (%) figure 11. power gain, drain efficiency and cw output power versus frequency at a constant input power figure 12. cw output power versus input power and frequency p out , output power (watts) figure 13. power gain and drain efficiency versus cw output power and frequency
14 rf device data nxp semiconductors MRFX1K80H 87.5?108 mhz broadband reference circuit z o =10 ? z source f = 87.5 mhz f = 108 mhz z load f = 108 mhz f = 87.5 mhz f mhz z source ? z load ? 87.5 3.69 + j5.19 3.90 + j4.73 98 3.60 + j4.90 3.88 + j3.99 108 3.16 + j4.69 3.35 + j3.95 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 14. broadband series equivalent source and load impedance ? 87.5?108 mhz z source z load input matching network device under test output matching network -- -- + + 50 ? 50 ?
MRFX1K80H 15 rf device data nxp semiconductors harmonic measurements ? 87.5?108 mhz broadband reference circuit h2 (175 mhz) h3 (262.5 mhz) h4 (350 mhz) ?33 db ?28 db ?51 db center: 228.5 mhz span: 350 mhz 35 mhz figure 15. 87.5 mhz harmonics @ 1300 w cw h4 h3 h2 175 mhz ?33 db 262.5 mhz ?28 db 350 mhz ?51 db h2 h3 h4 f1 87.5 mhz fundamental (f1)
16 rf device data nxp semiconductors MRFX1K80H 230 mhz narrowband production test fixture ? 6.0 4.0 (152 mm 102 mm) figure 16. MRFX1K80H narrowband test fixture component layout ? 230 mhz *c4, c17, c18, c19, c20, c21, c22 and c23 are mounted vertically. c13 MRFX1K80H rev. 0 coax2 coax1 coax4 coax3 c5 c1 c8 c7 c11 r2 c2 c3 c4* l2 l1 c6 c12 c9 r1 c10 l4 l3 cut out area c17* c18* c19* c20* c21* c22* c23* c24 c25 d93270 c27 c26 c28 c29 c30 c31 c14 c15 c16 table 11. MRFX1K80H narrowband test fixture component designations and values ? 230 mhz part description part number manufacturer c1, c2, c3 22 pf chip capacitor atc100b220jt500xt atc c4 27 pf chip capacitor atc100b270jt500xt atc c5, c6 22 f, 35 v tantalum capacitor t491x226k035at kemet c7, c9 0.1 f chip capacitor cdr33bx104akws avx c8, c10 220 nf chip capacitor c1812c224k5ractu kemet c11, c12, c24, c25 1000 pf chip capacitor atc100b102jt50xt atc c13 24 pf chip capacitor atc800r240jt500xt atc c14, c15, c16 20 pf chip capacitor atc800r200jt500xt atc c17, c18, c19, c20, c21, c22 240 pf chip capacitor atc100b241jt200xt atc c23 7.5 pf chip capacitor atc100b7r5ct500xt atc c26, c27, c28, c29, c30, c31 470 f, 100 v electrolytic capacitor mcgpr100v477m16x32-rh multicomp coax1, 2, 3, 4 25 ? semi rigid coax cable, 2.2 shield length ut-141c-25 micro--coax l1, l2 5 nh inductor, 2 turns a02tjlc coilcraft l3, l4 6.6 nh inductor, 2 turns ga3093-alc coilcraft r1, r2 10 ? , 1/4 w chip resistor crcw120610r0jnea vishay pcb arlon ad255a 0.030 , r =2.55 d93270 mtl
MRFX1K80H 17 rf device data nxp semiconductors typical characteristics ? 230 mhz, t c =25 _ c production test fixture 0 v gs , gate--source voltage (volts) figure 17. output power versus gate--source voltage at a constant input power 0 p out , output power (watts) peak 1000 500 1.5 2.0 2.5 3.0 2000 1500 p in =5.6w p in =2.8w 0.5 1.0 p in , input power (dbm) peak 56 52 p out , output power (dbm) peak 48 44 40 36 24 32 28 60 64 230 2080 2300 f (mhz) p1db (w) p3db (w) figure 18. output power versus input power p out , output power (watts) peak figure 19. power gain and drain efficiency versus output power and quiescent current g ps , power gain (db) d, drain efficiency (%) 22 21 i dq(a+b) = 900 ma 25 3 100 1000 80 60 40 20 27 d g ps 19 d t c = ?40 _ c 20 18 16 28 30 100 1000 10 80 70 60 50 40 30 20 30 90 p out , output power (watts) peak figure 20. power gain and drain efficiency versus output power g ps , power gain (db) d, drain efficiency (%) 14 0 p out , output power (watts) peak figure 21. power gain versus output power and drain--source voltage 24 g ps , power gain (db) 20 18 500 1000 1500 22 v dd =30v 16 26 2500 44 68 22 24 26 2000 2500 g ps 4000 3000 40 v 3.5 20 23 24 26 300 ma 600 ma 900 ma 100 ma 300 ma 600 ma 70 50 30 10 85 _ c 25 _ c 85 _ c 25 _ c ?40 _ c 14 50 v 55 v 60 v 65 v v dd = 65 vdc, f = 230 mhz pulse width = 100 sec, 20% duty cycle 90 100 ma v dd =65vdc,i dq(a+b) = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle v dd =65vdc,i dq(a+b) = 100 ma, f = 230 mhz pulse width = 100 sec 20% duty cycle i dq = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle v dd =65vdc,i dq(a+b) = 100 ma, f = 230 mhz pulse width = 100 sec, 20% duty cycle
18 rf device data nxp semiconductors MRFX1K80H 230 mhz narrowband production test fixture f mhz z source ? z load ? 230 1.1 + j2.7 2.2 + j2.9 z source = test fixture impedance as measured from gate to gate, balanced configuration. z load = test fixture impedance as measured from drain to drain, balanced configuration. figure 22. narrowband series equivalent source and load impedance ? 230 mhz input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ?
MRFX1K80H 19 rf device data nxp semiconductors package dimensions
20 rf device data nxp semiconductors MRFX1K80H
MRFX1K80H 21 rf device data nxp semiconductors product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1908: solder reflow attach method for high power rf devices in air cavity packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2017 ? initial release of data sheet
22 rf device data nxp semiconductors MRFX1K80H how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, repr esentation, or guarant ee regardi ng the suit ability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp and the nxp logo are trademarks of nxp b.v. all other pr oduct or service names are the property of their respective owners. e 2017 nxp b.v. document number: MRFX1K80H rev. 0, 08/2017

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